专利名称：Thin film transistor substrate using a
horizontal electric field
发明人：Soon Sung Yoo,Oh Nam Kwon,Heung Lyul
Cho
申请号：US11544748申请日：20061010
公开号：US20070029551A1公开日：20070208
专利附图：
摘要：A thin film transistor substrate structure for using a horizontal electric fieldincludes a substrate; a gate line and a first common line formed on the substrate parallel
to each other from a first conductive layer; a gate insulating film formed on thesubstrate, the gate line, and the first common line; a data line formed from a secondconductive layer on the gate insulating film crossing the gate line and the common linewith the gate insulating film therebetween to define a pixel area; a thin film transistorconnected to the gate line and the data line; a protective film covering the data line andthe thin film transistor; a common electrode formed from a third conductive layerconnected to the common line through a hole passing through the protective film andthe gate insulating film; and a pixel electrode formed from the second conductive layerconnected to the thin film transistor to define a horizontal electric field between thepixel electrode and the common electrode.
申请人：Soon Sung Yoo,Oh Nam Kwon,Heung Lyul Cho
地址：Gunpo-si KR,Yongin-si KR,Suwon-si KR
国籍：KR,KR,KR
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