MOS semiconductor device and fabrication method of

专利名称：MOS semiconductor device and fabrication

method of the same

发明人：Niwayama, Kazuhiro, c/o Mitsubishi Denki

K.K.,Tokunou, Futoshi, c/o Mitsubishi DenkiK.K.

申请号：EP92303652.9申请日：19920423公开号：EP0510966A3公开日：19930721

专利附图：

摘要：A MOS semiconductor device is disclosed which exhibits high switching

operations including high turn-on and an excellent self-cooling capability. The deviceprevents damage to insulation films and electrodes thereof. An IGT includes a multi-layerstructure having a p type emitter layer (1), an n type base layer (2), a p type base layer (3)and an n type emitter layer (4) are superimposed therein. A gate electrode (7) and anoverlying gate oxide film (6) are disposed on a recessed surface (5a) of the multi-layerstructure. A cathode electrode (8) is located only in and around a cathode surface (5) sothat a most top surface of the gate electrode (7) is uncovered. Via an intervening cathodedistortion snubbering plate (14), the cathode electrode (8) is in pressure contact with acathode electrode body (15). The gate and the cathode electrodes (7) and (8) have areduced capacitance therebetween. The cathode electrode body (15) serves to cool thecathode electrode (8). The gate electrode (7) and the gate oxide film (6) are protectedfrom stress, and hence, will not be damaged by stress.

申请人：MITSUBISHI DENKI KABUSHIKI KAISHA

地址：2-3, Marunouchi 2-chome Chiyoda-ku Tokyo JP

国籍：JP

代理机构：Mounteney, Simon James

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