2SC1368资料

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1368

DESCRIPTION

·With TO-126 package

·Low collector saturation voltage

APPLICATIONS

·For low frequency power amplifier applications

PINNING

PIN DESCRIPTION 1 2

Emitter

Collector;connected to mounting base

3 Base

Absolute maximum ratings(Ta=25℃)

SYMBOL PARAMETER VCBO VCEO VEBO IC PC

Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector power dissipation

Open collector TC=25℃

CONDITIONS

VALUE UNIT 25 25 5 1.5 8

V V V A W

Tj Junction temperature Tstg Storage temperature

150 ℃ -55~150 ℃

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltageV(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE

2SC1368

CONDITIONS MIN TYP. MAXUNIT

25 25 5

V V V

IC=1mA; IB=0

Collector-base breakdown voltage IC=50μA; IE=0 Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain

IE=50μA; IB=0

IC=1.5A; IB=0.15A 0.8 V VCB=25V; IE=0 1.0 μA

VEB=5V; IC=0 1.0 μA

IC=0.5A ; VCE=2V 60 320 IC=0.5A ; VCE=5V

180 MHz

fT Transition frequency

2

元器件交易网www.cecb2b.com

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SC1368

Fig.2 Outline dimensions

3