专利名称：Scaling of filament based RRAM发明人：Sung Hyun Jo申请号：US14839442申请日：20150828公开号：US09559299B1公开日：20170131
专利附图：
摘要：A solid state memory comprises a top electrode, a bottom electrode and aninsulating switching medium that is disposed at a thickness based on a predeterminedfunction. The insulating switching medium generates a conduction path in response to anelectric signal applied to the device. The thickness of the insulating switching medium is a
function of a filament width of the conduction path and operates to prevent rupture of asemi-stable region. The semi-stable region maintains filament structure over time anddoes not degrade into retention failure. The solid state memory can comprise one ormore conducting layers that can operate to control the conductance at an on-state ofthe memory and offer oxygen vacancies or metal ions to the switching medium. Thefunction of the thickness of the insulating switching medium can vary depending upon thenumber of conduction layers disposed at the insulating switching medium.
申请人：Crossbar, Inc.
地址：Santa Clara CA US
国籍：US
代理机构：Amin, Turocy & Watson, LLP
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