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Semiconductor storage device and refresh control m

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专利名称:Semiconductor storage device and refresh

control method therefor

发明人:Yoshiro Riho,Yutaka Ito申请号:US11042441申请日:20050126公开号:US07167403B2公开日:20070123

专利附图:

摘要:A dynamic semiconductor storage device in which the power supply currentduring the standby time is diminished to decrease the power consumption and tosuppress the chip area from increasing. During the normal operation, the information as

to a word line associated with a row address accessed during the normal operation isstored in a RAM. In entering self refresh, data of memory cells connected to a word lineassociated with a row address accessed during the normal operation time is read out andcheck bits for the data are appended in an encoder and written in a check bit area. As aninitializing operation for the first self refresh entry after power up sequence, the dataretention time of the memory cells is inspected every word line. Based on the results ofinspection, the setting value of the refresh period of the word line is determined andwritten in the RAM to set the word line based refresh period. During error check for therefresh operation, any error is corrected by an error correction circuit.

申请人:Yoshiro Riho,Yutaka Ito

地址:Tokyo JP,Tokyo JP

国籍:JP,JP

代理机构:Foley & Lardner LLP

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