Refresh control for semiconductor memory device

专利名称：Refresh control for semiconductor memory

device

发明人：Koichi Mizugaki申请号：US10747402申请日：20031230

公开号：US20040156257A1公开日：20040812

专利附图：

摘要：An external access timing signal becomes active according to changes of theexternal address. An address latch signal becomes active according to the timing whenthe external access timing signal becomes active. In a case where the changes of the

external address occurs while the address latch signal is active and consequently theexternal access timing signal becomes active, a refresh arbiter signal does not becomeactive. When the refresh arbiter signal becomes active after the generation of the refreshtiming signal, a refresh execution timing signal becomes active according to the change ofthe refresh arbiter signal. The time period when the address latch signal is active is set tobe substantially the same as the preferable activation time period. The time period whenthe external access timing signal is active is set to be substantially the same as thepreferable pre-charge time period.

申请人：SEIKO EPSON CORPORATION

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