专利名称：Bit line charge accumulation sensing for
resistive changing memory
发明人：Chulmin Jung,Yong Lu,Kang Yong Kim,Young
Pil Kim
申请号：US13476368申请日：20120521公开号：US08638597B2公开日：20140128
专利附图：
摘要：A memory array includes a plurality of magneto-resistive changing memorycells. Each resistive changing memory cell is electrically between a source line and a bit
line and a transistor electrically between the resistive changing memory cell and the bitline. The transistor has a gate electrically between a source region and a drain region andthe source region being electrically between the r magneto-resistive changing memorycell and the gate. A word line is electrically coupled to the gate. A bit line chargeaccumulation sensing for magneto-resistive changing memory is also disclosed.
申请人：Chulmin Jung,Yong Lu,Kang Yong Kim,Young Pil Kim
地址：Eden Prairie MN US,Rosemount MN US,Boise ID US,Eden Prairie MN US
国籍：US,US,US,US
代理机构：Mueting Raasch & Gebhardt
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