Features
•Single-voltageRead/WriteOperation:2.7Vto3.6V(BV),3.0Vto3.6V(LV)•FastReadAccessTime–70ns•InternalErase/ProgramControl•
SectorArchitecture
–One8KWord(16KBytes)BootBlockwithProgrammingLockout–Two4KWord(8KBytes)ParameterBlocks
–One112KWord(224KBytes)MainMemoryArrayBlock•FastSectorEraseTime–10Seconds
•Byte-by-byteorWord-by-wordProgramming–30µsTypical•HardwareDataProtection
•DataPollingforEndofProgramDetection•LowPowerDissipation–25mAActiveCurrent
–50µACMOSStandbyCurrent•
Typical10,000WriteCycles
Description
TheAT49BV/LV2048Aisa3-volt,2-megabitFlashmemoryorganizedas262,144wordsof8bitseachor128Kwordsof16bitseach.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto70nswithpowerdissipationofjust67mWat2.7Vread.Whendeselected,theCMOSstandbycurrentislessthan50µA.
Thedevicecontainsauser-enabled“bootblock”protectionfeature.TheAT49BV/LV2048Alocatesthebootblockatlowestorderaddresses(“bottomboot”).Toallowforsimplein-systemreprogrammability,theAT49BV/LV2048Adoesnotrequirehighinputvoltagesforprogramming.ReadingdataoutofthedeviceissimilartoreadingfromanEPROM;ithasstandardCE,OEandWEinputstoavoidbuscon-tention.ReprogrammingtheAT49BV/LV2048Aisperformedbyfirsterasingablockofdataandthenprogrammingonabyte-by-byteorword-by-wordbasis.
PinConfigurations
PinNameFunctionA0-A16AddressesCEChipEnableOEOutputEnableWEWriteEnableRESETResetVPPVPPcanbeleftunconnectedorconnectedtoVCC,GND,5Vor12V.Theinputhasnoeffectontheoperationofthedevice.I/O0-I/O15DataInputs/OutputsI/O15(A-1)I/O15(DataInput/Output,WordMode)A-1(LSBAddressInput,ByteMode)BYTESelectsByteorWordModeNCNoConnect2-megabit(256Kx8/128Kx16)Single2.7-voltBattery-Voltage™FlashMemoryAT49BV2048AAT49LV2048ARev.1914D–FLASH–03/021
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AT49BV/LV2048ASOIC(SOP)
AT49BV/LV2048ATSOPTopView
Type1
A15A14A13A12A11A10A9A8NCNCWERESETVPPNCNCNCNCA7A6A5A4A3A2A1123456789101112131415161718192021222324484746454443424140393837363534333231302928272625A16BYTEGNDI/O15/A-1I/O7I/O14I/O6I/O13I/O5I/O12I/O4VCCI/O11I/O3I/O10I/O2I/O9I/O1I/O8I/O0OEGNDCEA0VPPNCNCA7A6A5A4A3A2A1A0CEGNDOEI/O0I/O8I/O1I/O9I/O2I/O10I/O3I/O111234567891011121314151617181920212244434241403938373635343332313029282726252423RESETWEA8A9A10A11A12A13A14A15A16BYTEGNDI/O15/A-1I/O7I/O14I/O6I/O13I/O5I/O12I/O4VCCNote:“•”denotesawhitedotonthepackage.
ThedeviceiserasedbyexecutingtheErasecommandsequence;thedeviceinternallycon-trolstheeraseoperation.Thememoryisdividedintofourblocksforeraseoperations.Therearetwo4Kwordparameterblocksections,thebootblock,andthemainmemoryarrayblock.Thetypicalnumberofprogramanderasecyclesisinexcessof10,000cycles.
The8Kwordbootblocksectionincludesareprogramminglockoutfeaturetoprovidedataintegrity.Thisfeatureisenabledbyacommandsequence.Oncethebootblockprogramminglockoutfeatureisenabled,thedatainthebootblockcannotbechangedwheninputlevelsof5.5voltsorlessareused.Thebootsectorisdesignedtocontainusersecurecode.TheBYTEpincontrolswhetherthedevicedataI/Opinsoperateinthebyteorwordconfigura-tion.IftheBYTEpinissetatalogic“1”orleftopen,thedeviceisinwordconfiguration,I/O0-I/O15areactiveandcontrolledbyCEandOE.IftheBYTEpinissetatlogic“0”,thedeviceisinbyteconfiguration,andonlydataI/OpinsI/O0-I/O7areactiveandcontrolledbyCEandOE.ThedataI/OpinsI/O8-I/O14aretri-statedandtheI/O15pinisusedasaninputfortheLSB(A-1)addressfunction.
2
AT49BV/LV2048A
1914D–FLASH–03/02
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AT49BV/LV2048A
AT49BV/LV2048ABlockDiagram
VCCGNDOEWECERESETADDRESSINPUTSCONTROLLOGICDATA INPUTS/OUTPUTSI/O0 - I/O15INPUT/OUTPUTBUFFERSPROGRAM DATALATCHESY-GATINGMAIN MEMORY(112K WORDS)PARAMETERBLOCK 24K WORDSPARAMETERBLOCK 14K WORDSBOOT BLOCK8K WORDSY DECODERX DECODER1FFFF0400003FFF0300002FFF0200001FFF00000DeviceOperation
READ:TheAT49BV/LV2048AisaccessedlikeanEPROM.WhenCEandOEarelowandWEishigh,thedatastoredatthememorylocationdeterminedbytheaddresspinsisassertedontheoutputs.Theoutputsareputinthehigh-impedancestatewheneverCEorOEishigh.Thisdual-linecontrolgivesdesignersflexibilityinpreventingbuscontention.
COMMANDSEQUENCES:Whenthedeviceisfirstpoweredonitwillberesettothereadorstandbymode,dependinguponthestateofthecontrollineinputs.Inordertoperformotherdevicefunctions,aseriesofcommandsequencesareenteredintothedevice.ThecommandsequencesareshownintheCommandDefinitionstable(I/O8-I/O15aredon’tcareinputsforthecommandcodes).ThecommandsequencesarewrittenbyapplyingalowpulseontheWEorCEinputwithCEorWElow(respectively)andOEhigh.TheaddressislatchedonthefallingedgeofCEorWE,whicheveroccurslast.ThedataislatchedbythefirstrisingedgeofCEorWE.Standardmicroprocessorwritetimingsareused.Theaddresslocationsusedinthecommandsequencesarenotaffectedbyenteringthecommandsequences.
RESET:ARESETinputpinisprovidedtoeasesomesystemapplications.WhenRESETisatalogichighlevel,thedeviceisinitsstandardoperatingmode.AlowlevelontheRESETinputhaltsthepresentdeviceoperationandputstheoutputsofthedeviceinahigh-impedancestate.WhenahighlevelisreassertedontheRESETpin,thedevicereturnstothereadorstandbymode,dependinguponthestateofthecontrolinputs.Byapplyinga12V ERASURE:Beforeabyteorwordcanbereprogrammed,itmustbeerased.Theerasedstateofmemorybitsisalogic“1”.TheentiredevicecanbeerasedbyusingtheChipErasecom-mandorindividualsectorscanbeerasedbyusingtheSectorErasecommands. CHIPERASE:Theentiredevicecanbeerasedatonetimebyusingthe6-bytechiperasesoftwarecode.Afterthechiperasehasbeeninitiated,thedevicewillinternallytimetheeraseoperationsothatnoexternalclocksarerequired.ThemaximumtimetoerasethechipistEC.Ifthebootblocklockouthasbeenenabled,thechiperasewillnoterasethedatainthebootblock;itwillerasethemainmemoryblockandtheparameterblocksonly.Afterthechiperase,thedevicewillreturntothereadorstandbymode. 3 1914D–FLASH–03/02 元器件交易网www.cecb2b.com SECTORERASE:Asanalternativetoafullchiperase,thedeviceisorganizedintofoursec-torsthatcanbeindividuallyerased.Therearetwo4Kwordparameterblocksections,onebootblock,andthemainmemoryarrayblock.TheSectorErasecommandisasix-buscycleoperation.ThesectoraddressislatchedonthefallingWEedgeofthesixthcyclewhilethe30HdatainputcommandislatchedattherisingedgeofWE.ThesectorerasestartsaftertherisingedgeofWEofthesixthcycle.Theeraseoperationisinternallycontrolled;itwillauto-maticallytimetocompletion.Wheneverthemainmemoryblockiserasedandreprogrammed,thetwoparameterblocksshouldbeerasedandreprogrammedbeforethemainmemoryblockiserasedagain.Wheneveraparameterblockiserasedandreprogrammed,theotherparam-eterblockshouldbeerasedandreprogrammedbeforethefirstparameterblockiserasedagain.Wheneverthebootblockiserasedandreprogrammed,themainmemoryblockandtheparameterblocksshouldbeerasedandreprogrammedbeforethebootblockiserasedagain.BYTE/WORDPROGRAMMING:Onceamemoryblockiserased,itisprogrammed(toalogic“0”)onabyte-by-byteorword-by-wordbasis.Programmingisaccomplishedviatheinternaldevicecommandregisterandisafour-buscycleoperation.Thedevicewillautomaticallygen-eratetherequiredinternalprogrampulses. Anycommandswrittentothechipduringtheembeddedprogrammingcyclewillbeignored.Ifahardwareresethappensduringprogramming,thedataatthelocationbeingprogrammedwillbecorrupted.Pleasenotethatadata“0”cannotbeprogrammedbacktoa“1”;onlyeraseoperationscanconvert“0”sto“1”s.ProgrammingiscompletedafterthespecifiedtBPcycletime.TheDataPollingfeaturemayalsobeusedtoindicatetheendofaprogramcycle.BOOTBLOCKPROGRAMMINGLOCKOUT:Thedevicehasonedesignatedblockthathasaprogramminglockoutfeature.Thisfeaturepreventsprogrammingofdatainthedesignatedblockoncethefeaturehasbeenenabled.Thesizeoftheblockis8Kwords.Thisblock,referredtoasthebootblock,cancontainsecurecodethatisusedtobringupthesystem.Enablingthelockoutfeaturewillallowthebootcodetostayinthedevicewhiledataintherestofthedeviceisupdated.Thisfeaturedoesnothavetobeactivated;thebootblock’susageasawrite-protectedregionisoptionaltotheuser.Theaddressrangeofthebootblockis00000Hto01FFFH. Oncethefeatureisenabled,thedatainthebootblockcannolongerbeerasedorpro-grammedwheninputlevelsof5.5Vorlessareused.Datainthemainmemoryblockcanstillbechangedthroughtheregularprogrammingmethod.Toactivatethelockoutfeature,aseriesofsixprogramcommandstospecificaddresseswithspecificdatamustbeperformed.PleaserefertotheCommandDefinitionstable. BOOTBLOCKLOCKOUTDETECTION:Asoftwaremethodisavailabletodetermineifpro-grammingofthebootblocksectionislockedout.Whenthedeviceisinthesoftwareproductidentificationmode(seeSoftwareProductIdentificationEntryandExitsections)areadfromthefollowingaddresslocationwillshowifprogrammingthebootblockislockedout–00002H.IfthedataonI/O0islow,thebootblockcanbeprogrammed;ifthedataonI/O0ishigh,theprogramlockoutfeaturehasbeenenabledandtheblockcannotbeprogrammed.Thesoft-wareproductidentificationexitcodeshouldbeusedtoreturntostandardoperation. BOOTBLOCKPROGRAMMINGLOCKOUTOVERRIDE:TheusercanoverridethebootblockprogramminglockoutbytakingtheRESETpinto12voltsduringtheentirechiperase,sectoreraseorwordprogrammingoperation.WhentheRESETpinisbroughtbacktoTTLlevelsthebootblockprogramminglockoutfeatureisagainactive. 4 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A PRODUCTIDENTIFICATION:Theproductidentificationmodeidentifiesthedeviceandman-ufacturerasAtmel.Itmaybeaccessedbyhardwareorsoftwareoperation.ThehardwareoperationmodecanbeusedbyanexternalprogrammertoidentifythecorrectprogrammingalgorithmfortheAtmelproduct. Fordetails,see“OperatingModes”(forhardwareoperation)or“SoftwareProductIdentifica-tionEntry/Exit”onpage13.Themanufactureranddevicecodesarethesameforbothmodes.DATAPOLLING:TheAT49BV/LV2048AfeaturesDataPollingtoindicatetheendofapro-gramcycle.DuringaprogramcycleanattemptedreadofthelastbyteloadedwillresultinthecomplementoftheloadeddataonI/O7.Oncetheprogramcyclehasbeencompleted,truedataisvalidonalloutputsandthenextcyclemaybegin.Duringachiporsectoreraseopera-tion,anattempttoreadthedevicewillgivea“0”onI/O7.Oncetheprogramorerasecyclehascompleted,truedatawillbereadfromthedevice.DataPollingmaybeginatanytimeduringtheprogramcycle. TOGGLEBIT:InadditiontoDataPolling,theAT49BV/LV2048Aprovidesanothermethodfordeterminingtheendofaprogramorerasecycle.Duringaprogramoreraseoperation,suc-cessiveattemptstoreaddatafromthedevicewillresultinI/O6togglingbetweenoneandzero.Oncetheprogramcyclehascompleted,I/O6willstoptogglingandvaliddatawillberead.Examiningthetogglebitmaybeginatanytimeduringaprogramcycle. HARDWAREDATAPROTECTION:HardwarefeaturesprotectagainstinadvertentprogramstotheAT49BV/LV2048Ainthefollowingways:(a)VCCsense:ifVCCisbelow1.8V(typical),theprogramfunctionisinhibited.(b)VCCpowerondelay:onceVCChasreachedtheVCCsenselevel,thedevicewillautomaticallytimeout10ms(typical)beforeprogramming.(c)Pro-graminhibit:holdinganyoneofOElow,CEhighorWEhighinhibitsprogramcycles.(d)Noisefilter:pulsesoflessthan15ns(typical)ontheWEorCEinputswillnotinitiateaprogramcycle. INPUTLEVELS:Whileoperatingwitha2.7Vto3.6Vpowersupply,theaddressandcontrolinputs(OE,CEandWE)maybedrivenfrom0to5.5Vwithoutadverselyaffectingtheopera-tionofthedevice.TheI/Olinescanonlybedrivenfrom0toVCC+0.6V. 5 1914D–FLASH–03/02 元器件交易网www.cecb2b.com CommandDefinition(inHex)(1) CommandSequenceReadChipEraseSectorEraseByte/WordProgramBootBlockLockout(2)ProductIDEntryProductIDExit(3)ProductIDExit(3)Notes: BusCycles166463311stBusCycleAddrAddr555555555555555555555555xxxxDataDOUTAAAAAAAAAAAAF02AAA2AAA2AAA2AAA2AAA2AAA5555555555555555555555555555555555558080A08090F055555555Addr5555AAAADINAA2AAA555555402AAA2AAA55555555SA(4)10302ndBusCycleAddrData3rdBusCycleAddrData4thBusCycleAddrData5thBusCycleAddrData6thBusCycleAddrData1.TheDATAFORMATineachbuscycleisasfollows:I/O15-I/O8(Don’tCare);I/O7-I/O0(Hex). TheADDRESSFORMATineachbuscycleisasfollows:A15-A0(Hex),A-1,andA15-A16(Don’tCare).2.Thebootsectorhastheaddressrange00000Hto01FFFH.3.EitheroneoftheProductIDExitcommandscanbeused.4.SA=sectoraddresses:(A16-A0) SA=01XXXforBOOTBLOCK SA=02XXXforPARAMETERBLOCK1SA=03XXXforPARAMETERBLOCK2SA=1FXXXforMAINMEMORYARRAY AbsoluteMaximumRatings* TemperatureunderBias................................-55°Cto+125°CStorageTemperature.....................................-65°Cto+150°CAllInputVoltages(includingNCPins)withRespecttoGround...................................-0.6Vto+6.25VAllOutputVoltageswithRespecttoGround.............................-0.6VtoVCC+0.6VVoltageonRESETwithRespecttoGround...................................-0.6Vto+13.5V*NOTICE: Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdam-agetothedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability. 6 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A DCandACOperatingRange AT49LV2048A-70OperatingTemperature(Case)VCCPowerSupplyCom.Ind.0°C-70°CN/A3.0V-3.6VAT49BV2048A-900°C-70°C-40°C-85°C2.7V-3.6VAT49BV2048A-120°C-70°C-40°C-85°C2.7V-3.6VOperatingModes ModeReadProgram/Erase(2)Standby/ProgramInhibitProgramInhibitCEVILVILVIHXXOutputDisableResetProductIdentificationHardwareVILVILVIHVIHA1-A16=VIL,A9=VH(3)A0=VILA1-A16=VIL,A9=VH(3)A0=VIHA0=VIL,A1-A16=VILA0=VIH,A1-A16=VILManufacturerCode(4)DeviceCode(4)ManufacturerCode(4)DeviceCode(4)XXOEVILVIHX(1)XVILVIHXWEVIHVILXVIHXXXRESETVIHVIHVIHVIHVIHVIHVILXHigh-ZHigh-ZAiAiAiXI/ODOUTDINHigh-ZSoftware(5)VIHNotes:1.2.3.4. XcanbeVILorVIH.RefertoACprogrammingwaveforms.VH=12.0V 5.Seedetailsunder“SoftwareProductIdentificationEntry/Exit”onpage13. DCCharacteristics SymbolILIILOISB1ISB2ICC(1)VILVIHVOLVOHParameterInputLoadCurrentOutputLeakageCurrentVCCStandbyCurrentCMOSVCCStandbyCurrentTTLVCCActiveCurrentInputLowVoltageInputHighVoltageOutputLowVoltageOutputHighVoltageIOL=2.1mAIOH=-400µA2.42.00.45ConditionVIN=0VtoVCCVI/O=0VtoVCCCE=VCC-0.3VtoVCCCE=2.0VtoVCCf=5MHz;IOUT=0mAMinMax10.010.050.00.525.00.6UnitsµAµAµAmAmAVVVVNote:Intheerasemode,ICCis50mA.7 1914D–FLASH–03/02 元器件交易网www.cecb2b.com ACReadCharacteristics AT49LV2048A-70SymboltACCtCE(1)tOE(2)tDF(3)(4)tOHtROParameterAddresstoOutputDelayCEtoOutputDelayOEtoOutputDelayCEorOEtoOutputFloatOutputHoldfromOE,CEorAddress,whicheveroccurredfirstRESETtoOutputDelay000800MinMax70703525000800AT49BV2048A-90MinMax90904025000800AT49BV2048A-12MinMax1201205030UnitsnsnsnsnsnsnsACReadWaveforms(1)(2)(3)(4) ADDRESSADDRESS VALIDCEtOECEtOEttACCtROHIGH ZOUTPUTVALIDtOHDFRESETOUTPUTNotes: 1.CEmaybedelayeduptotACC-tCEaftertheaddresstransitionwithoutimpactontACC. 2.OEmaybedelayeduptotCE-tOEafterthefallingedgeofCEwithoutimpactontCEorbytACC-tOEafteranaddresschange withoutimpactontACC. 3.tDFisspecifiedfromOEorCE,whicheveroccursfirst(CL=5pF).4.Thisparameterischaracterizedandisnot100%tested. 8 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A InputTestWaveformsandMeasurementLevel 2.4V0.4VtR,tF<5ns OutputTestLoad 3.3V1.8KOUTPUTPIN1.3K100 pFPinCapacitance f=1MHz,T=25°C(1) SymbolCINCOUTTyp48Max612UnitspFpFConditionsVIN=0VVOUT=0VNote:Thisparameterischaracterizedandisnot100%tested.9 1914D–FLASH–03/02 元器件交易网www.cecb2b.com ACWordLoadCharacteristics SymboltAS,tOEStAHtCStCHtWPtDStDH,tOEHtWPHParameterAddress,OESetupTimeAddressHoldTimeChipSelectSetupTimeChipSelectHoldTimeWritePulseWidth(WEorCE)DataSetupTimeData,OEHoldTimeWritePulseWidthHighMin070007070050MaxUnitsnsnsnsnsnsnsnsnsACByte/WordLoadWaveforms WEControlled CEControlled 10 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A ProgramCycleCharacteristics SymboltBPtAStAHtDStDHtWPtWPHtECParameterByte/WordProgrammingTimeAddressSetupTimeAddressHoldTimeDataSetupTimeDataHoldTimeWritePulseWidthWritePulseWidthHighEraseCycleTime070700705010MinTyp30MaxUnitsµsnsnsnsnsnsnssecondsProgramCycleWaveforms PROGRAM CYCLEOECEtWPWEtWPHtBPtASA0-A16tAH5555tDStDH2AAA5555ADDRESS5555DATAAA55A0INPUT DATAAASectororChipEraseCycleWaveforms OE(1)CEtWPWEtASA0-A16tAH5555tDSDATAAAWORD 055WORD 180WORD 2AAWORD 355WORD 4Note 3WORD 5tDH2AAA555555552AAANote 2tECtWPHNotes: 1.OEmustbehighonlywhenWEandCEarebothlow. 2.Forchiperase,theaddressshouldbe5555.Forsectorerase,theaddressdependsonwhatsectoristobeerased. (Seenote4underCommandDefinitions.) 3.Forchiperase,thedatashouldbe10H,andforsectorerase,thedatashouldbe30H. 11 1914D–FLASH–03/02 元器件交易网www.cecb2b.com DataPollingCharacteristics(1) SymboltDHtOEHtOEtWRNotes: ParameterDataHoldTimeOEHoldTimeOEtoOutputDelay(2)WriteRecoveryTime1.Theseparametersarecharacterizedandnot100%tested.2.SeetOEspecin“ACReadCharacteristics”onpage8. 0Min1010TypMaxUnitsnsnsnsnsDataPollingWaveforms WECEOEtDHI/O7A0-A16tOEHtOEAnHIGH ZAnAnAnAntWRToggleBitCharacteristics(1) SymboltDHtOEHtOEtOEHPtWRNotes:ParameterDataHoldTimeOEHoldTimeOEtoOutputDelay(2)OEHighPulseWriteRecoveryTime1.Theseparametersarecharacterizedandnot100%tested.2.SeetOEspecin“ACReadCharacteristics”onpage8. 1500Min1010TypMaxUnitsnsnsnsnsnsToggleBitWaveforms(1)(2)(3) WECEtOEHOEtDHI/O6tOEHIGH ZtWRtOEHPNotes: 1.TogglingeitherOEorCEorbothOEandCEwilloperatetogglebit.ThetOEHPspecificationmustbemetbythetoggling input(s). 2.BeginningandendingstateofI/O6willvary. 3.Anyaddresslocationmaybeusedbuttheaddressshouldnotvary. 12 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A (1) SoftwareProductIdentificationEntry(1)BootBlockLockoutEnableAlgorithm LOAD DATA AATOADDRESS 5555LOAD DATA 55TOADDRESS 2AAALOAD DATA 90TOADDRESS 5555ENTER PRODUCTIDENTIFICATIONMODE(2)(3)(5)SoftwareProductIdentificationExit(1)(6) LOAD DATA AAORLOAD DATA F0TOTOADDRESS 5555ANY ADDRESSLOAD DATA 55EXIT PRODUCTTOIDENTIFICATIONADDRESS 2AAAMODE(4)LOAD DATA F0TOADDRESS 5555EXIT PRODUCTIDENTIFICATIONMODE(4)Notes:1.DataFormat:I/O15-I/O8(Don’tCare);I/O7-I/O0(Hex) AddressFormat:A15-A0(Hex),A-1,andA15-A16(Don’tCare). 2. A1-A16=VIL. ManufacturerCodeisreadforA0=VIL;DeviceCodeisreadforA0=VIH. 3.Thedevicedoesnotremaininidentificationmodeifpowereddown. 4.Thedevicereturnstostandardoperationmode.5.ManufacturerCode:001FHDeviceCode:0082H 6. EitheroneoftheProductIDExitcommandscanbeused. 1914D–FLASH–03/02 LOAD DATA AATOADDRESS 5555LOAD DATA 55TOADDRESS 2AAALOAD DATA 80TOADDRESS 5555LOAD DATA AATOADDRESS 5555LOAD DATA 55TOADDRESS 2AAALOAD DATA 40TOADDRESS 5555PAUSE 1 second(2)7.DataFormat:I/O15-I/O8(Don’tCare);I/O7-I/O0(Hex) AddressFormat:A15-A0(Hex),A-1,andA15-A16(Don’tCare). 8.BootBlockLockoutfeatureenabled. 13 元器件交易网www.cecb2b.com OrderingInformation tACC(ns)7090ICC(mA)Active2525Standby0.050.05OrderingCodeAT49LV2048A-70RCAT49LV2048A-70TCAT49BV2048A-90TCAT49BV2048A-90TI120250.05AT49BV2048A-12TCAT49BV2048A-12TIPackage44R48T48T48T48T48TOperationRangeCommercial(0°to70°C)Commercial(0°to70°C)Industrial(-40°to85°C)Commercial(0°to70°C)Industrial(-40°to85°C)PackageType44R48T44-lead,0.525\"Wide,PlasticGullWingSmallOutline(SOIC)48-lead,12x20mm,PlasticThinSmallOutlinePackage(TSOP)14 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AT49BV/LV2048A PackagingInformation 44R–SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Inches. 0.508(0.020)0.356(0.014)13.46(0.530)13.21(0.520)16.18(0.637)15.82(0.623)PIN 11.27(0.050) BSC28.32(1.115)28.07(1.105)2.67(0.105)2.41(0.095)0.33(0.130)1.27(0.050)0º ~ 8º1.00(0.039)0.60(0.024)0.250(0.010)0.100(0.004)04/11/01 2325 Orchard Parkway San Jose, CA 95131TITLE44R, 44-lead (0.525\" Body) Plastic Gull Wing Small Outline (SOIC) DRAWING NO.44RREV. AR15 1914D–FLASH–03/02 元器件交易网www.cecb2b.com 48T–TSOP PIN 10º ~ 8º cPin 1 IdentifierD1DLebA2L1EASEATING PLANEGAGE PLANEA1SYMBOLAA1A2Notes:1.This package conforms to JEDEC reference MO-142, Variation DD. 2.Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.3. Lead coplanarity is 0.10 mm maximum.DD1EL L1bceCOMMON DIMENSIONS(Unit of Measure = mm)MIN–0.050.9519.8018.3011.900.50NOM––1.0020.0018.4012.000.600.25 BASIC0.170.100.22–0.50 BASIC0.27 0.21MAX1.200.151.0520.2018.5012.100.70Note 2Note 2 NOTE10/18/01TITLE 2325 Orchard Parkway48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline San Jose, CA 95131Package, Type I (TSOP)DRAWING NO.48TREV. BR16 AT49BV/LV2048A 1914D–FLASH–03/02 元器件交易网www.cecb2b.com AtmelHeadquarters CorporateHeadquarters 2325OrchardParkwaySanJose,CA95131TEL1(408)441-0311FAX1(408)487-2600 AtmelOperations Memory AtmelCorporate 2325OrchardParkwaySanJose,CA95131TEL1(408)436-4270FAX1(408)436-4314AtmelCorporate 2325OrchardParkwaySanJose,CA95131TEL1(408)436-4270FAX1(408)436-4314 AtmelNantesLaChantrerieBP70602 44306NantesCedex3,FranceTEL(33)2-40-18-18-18FAX(33)2-40-18-19-60 RF/Automotive Europe AtmelSarL RoutedesArsenaux41CasaPostale80CH-1705FribourgSwitzerland TEL(41)26-426-5555FAX(41)26-426-5500AtmelAsia,Ltd.Room1219 ChinachemGoldenPlaza77ModyRoadTsimhatsuiEastKowloonHongKong TEL(852)2721-9778FAX(852)2722-1369AtmelJapanK.K. 9F,TonetsuShinkawaBldg.1-24-8Shinkawa Chuo-ku,Tokyo104-0033Japan TEL(81)3-3523-3551FAX(81)3-3523-7581 Microcontrollers AtmelHeilbronnTheresienstrasse2Postfach3535 74025Heilbronn,GermanyTEL(49)71-31-67-0FAX(49)71-31-67-2340AtmelColoradoSprings 1150EastCheyenneMtn.Blvd.ColoradoSprings,CO80906TEL1(719)576-3300FAX1(719)540-1759 Asia Biometrics/Imaging/Hi-RelMPU/HighSpeedConverters/RFDatacom ASIC/ASSP/SmartCards Japan AtmelRoussetZoneIndustrielle 13106RoussetCedex,FranceTEL(33)4-42-53-60-00FAX(33)4-42-53-60-01AtmelColoradoSprings 1150EastCheyenneMtn.Blvd.ColoradoSprings,CO80906TEL1(719)576-3300FAX1(719)540-1759 AtmelSmartCardICs ScottishEnterpriseTechnologyParkMaxwellBuilding EastKilbrideG750QR,ScotlandTEL(44)1355-803-000FAX(44)1355-242-743 AtmelGrenoble AvenuedeRochepleineBP123 38521Saint-EgreveCedex,FranceTEL(33)4-76-58-30-00FAX(33)4-76-58-34-80 e-mail literature@atmel.com WebSite http://www.atmel.com ©AtmelCorporation2002. AtmelCorporationmakesnowarrantyfortheuseofitsproducts,otherthanthoseexpresslycontainedintheCompany’sstandardwarrantywhichisdetailedinAtmel’sTermsandConditionslocatedontheCompany’swebsite.TheCompanyassumesnoresponsibilityforanyerrorswhichmayappearinthisdocument,reservestherighttochangedevicesorspecificationsdetailedhereinatanytimewithoutnotice,anddoesnotmakeanycommitmenttoupdatetheinformationcontainedherein.NolicensestopatentsorotherintellectualpropertyofAtmelaregrantedbytheCompanyinconnectionwiththesaleofAtmelproducts,expresslyorbyimplication.Atmel’sproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystems. ATMEL®istheregisteredtrademarkofAtmel;Battery-Voltage™isthetrademarkofAtmel.Othertermsandproductnamesmaybethetrademarksofothers. Printedonrecycledpaper. 1914D–FLASH–03/02 /xM 因篇幅问题不能全部显示,请点此查看更多更全内容