Semiconductor integrated circuit device

专利名称：Semiconductor integrated circuit device发明人：Hiroshi Shiba申请号：US06/011582申请日：19790212公开号：US04450470A公开日：19840522

摘要：An integrated circuit device of large scale integration and a method ofmanufacturing the same makes possible high density packing of circuit elements byeliminating a great number of very minute contact holes. Instead, a circuit-elementconnector comprised of a polycrystalline silicon wiring path is formed by selectiveoxidation. Impurity atoms are introduced into the semiconductor substrate through thepolycrystalline silicon circuit-element connector to form a desired circuit element. A layerof high-conductive material is provided on the polycrystalline silicon layer.

申请人：NIPPON ELECTRIC CO., LTD.

代理机构：Sughrue, Mion, Zinn, Macpeak, and Seas

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